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Information card for entry 8101666
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| Coordinates | 8101666.cif |
|---|
| Formula | C32 H58 Co O2 S2 Si4 |
|---|---|
| Calculated formula | C32 H58 Co O2 S2 Si4 |
| SMILES | [Co](Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)(Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)([O]1CCCC1)[O]1CCCC1 |
| Title of publication | Crystal structure of ditetrahydrofuranecobalt(II) 2,6-bis(trimethylsilyl) thiophenolate, C~32~H~58~O~2~Si~4~S~2~Co |
| Authors of publication | Hauptmann, Ralf; Schneider, Jörg; Henkel, Gerald |
| Journal of publication | Zeitschrift für Kristallographie - New Crystal Structures |
| Year of publication | 1998 |
| Journal volume | 213 |
| Journal issue | 4 |
| Pages of publication | 783 - 784 |
| a | 31.057 ± 0.01 Å |
| b | 14.132 ± 0.005 Å |
| c | 17.794 ± 0.007 Å |
| α | 90° |
| β | 92.74 ± 0.03° |
| γ | 90° |
| Cell volume | 7800.81 Å3 |
| Cell temperature | 150 K |
| Ambient diffraction temperature | 150 K |
| Number of distinct elements | 6 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for significantly intense reflections | 0.0871 |
| Weighted residual factors for significantly intense reflections | 0.1283 |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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