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Information card for entry 2200157
Preview
| Coordinates | 2200157.cif |
|---|---|
| Original IUCr paper | HTML |
| Formula | C32 H28 Si2 |
|---|---|
| Calculated formula | C32 H28 Si2 |
| SMILES | [Si](c1ccccc1)(c1ccccc1)(c1ccccc1)/C=C/[SiH](c1ccccc1)c1ccccc1 |
| Title of publication | (<i>E</i>)-1-Diphenylsilyl-2-triphenylsilylethene |
| Authors of publication | Lee, Suk Joong; Han, Byung Hee; Sung, Chang-Keun; Kim, Jin-Gyu; Suh, Il-Hwan |
| Journal of publication | Acta Crystallographica Section E |
| Year of publication | 2001 |
| Journal volume | 57 |
| Journal issue | 3 |
| Pages of publication | o271 - o272 |
| a | 11.1046 ± 0.0012 Å |
| b | 11.4205 ± 0.0011 Å |
| c | 12.7004 ± 0.0009 Å |
| α | 72.632 ± 0.007° |
| β | 78.905 ± 0.007° |
| γ | 62.198 ± 0.011° |
| Cell volume | 1357.1 ± 0.3 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 3 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1363 |
| Residual factor for significantly intense reflections | 0.0627 |
| Weighted residual factors for all reflections included in the refinement | 0.1461 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.023 |
| Diffraction radiation wavelength | 0.71069 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
Version history
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Users of the data should acknowledge the original authors of the
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